Journal
NATURE
Volume 462, Issue 7276, Pages 1039-1043Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/nature08639
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Funding
- Korean National Research Laboratory programme
- Korean National Core Research Center
- World Class University programme of the Korean Ministry of Education, Science and Technology
- Program for Integrated Molecular System at the Gwangju Institute of Science and Technology
- SystemIC2010 project of the Korean Ministry of Knowledge Economy
- US Army Research Office [W911NF-08-1-0365]
- Canadian Institute for Advanced Research
- National Research Foundation of Korea [2008-0062153] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The control of charge transport in an active electronic device depends intimately on the modulation of the internal charge density by an external node(1). For example, a field-effect transistor relies on the gated electrostatic modulation of the channel charge produced by changing the relative position of the conduction and valence bands with respect to the electrodes. In molecular-scale devices(2-10), a longstanding challenge has been to create a true three-terminal device that operates in this manner (that is, by modifying orbital energy). Here we report the observation of such a solid-state molecular device, in which transport current is directly modulated by an external gate voltage. Resonance-enhanced coupling to the nearest molecular orbital is revealed by electron tunnelling spectroscopy, demonstrating direct molecular orbital gating in an electronic device. Our findings demonstrate that true molecular transistors can be created, and so enhance the prospects for molecularly engineered electronic devices.
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