Journal
NANOTECHNOLOGY
Volume 29, Issue 48, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aae05f
Keywords
two-dimensional materials; mid-IR modulation; black arsenic phosphorus
Funding
- National Key R&D Program of China [2018YFA0307200]
- National Natural Science Foundation of China [61775092]
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Black arsenic phosphorus (b-AsP) is a promising two-dimensional material for various optoelectronic applications, bridging the wavelength gap between two-dimensional molybdenum disulfide and graphene. In particular, it has intriguing potential in photodetectors and great advantages in the mid-infrared field. However, its optoelectronic modulation has yet to be elucidated, which requires a fundamental understanding of its field-effect optical modulation. Here, we report the measurements of the lower-energy infrared anisotropic optical response of thin b-AsP under different electrical gating. We reveal that in addition to band edge absorption, amplitude modulation of sub-band absorption up to ten percent is also obtained in reflection extinction. These in-gap absorptions are attributed to spin-orbital coupling and free carrier absorption. Our results suggest the important potential for use of b-AsP in mid-infrared optoelectronic modulator applications.
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