Journal
NANOTECHNOLOGY
Volume 29, Issue 41, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aad64c
Keywords
synaptic material; STDP; RRAM; oxygen vacancy; HfO2
Funding
- Nano Material Technology Development Programs through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [NRF-2016M3A7B4910426, NRF-2015R1D1A1A01060300]
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We performed various pulse measurements on an atomic layer deposited (ALD) HfO2-based resistive switching random access memory (RRAM) device and investigated its electronic synaptic characteristics. Unlike requirements for RRAM device application, to achieve the multistate conductance changes required for the synaptic device, we employed additional sputtered TaO,, thin film formation on the ALD HfO2 switching medium, which leads to engineering the concentration of oxygen vacancies and modulating the conductive filaments. With this TaOx/HfO2 bi-layered device, we attained gradual resistive switching, linear and symmetric conductance change, improved endurance and reproducibility characteristics compared to a single HfO2 device. Finally, we emulated spike-timing-dependent plasticity based learning rule with pulses inspired by neural action potential, indicating its potential as an electronic synaptic device in a hardware neuromorphic system.
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