Journal
NANOTECHNOLOGY
Volume 25, Issue 36, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/25/36/365202
Keywords
2D materials; optoelectronic; phototransistor; photodetector; molybdenum diselenide
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In this paper, we report on the fabrication and optoelectronic properties of high sensitive phototransistors based on few-layered MoSe2 back-gated field-effect transistors, with a mobility of 19.7 cm(2) V-1 s(-1) at room temperature. We obtained an ultrahigh photoresponsivity of 97.1 AW(-1) and an external quantum efficiency (EQE) of 22 666% using 532 nm laser excitation at room temperature. The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance. Thanks to their high photoresponsivity and external quantum efficiency, the few-layered MoSe2-based devices are promising for photoelectronic applications.
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