Journal
NANOTECHNOLOGY
Volume 25, Issue 37, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/25/37/375502
Keywords
GaN wires; piezoelectricity; self-powered flexible strain sensors; Langmuir-Blodgett assembly
Funding
- CEA's Nanoscience Transversal Program
- French Research Agency project MECANIX [ANR-11-BS10-0014]
- Agence Nationale de la Recherche (ANR) [ANR-11-BS10-0014] Funding Source: Agence Nationale de la Recherche (ANR)
Ask authors/readers for more resources
We report a highly flexible strain sensor which exploits the piezoelectric properties of ultra-long gallium nitride (GaN) wires. Langmuir-lodgett assembled wires are encapsulated in a dielectric material (parylene-C), which is sandwiched between two planar electrodes in a capacitor-like configuration. Through FEM simulations we show that encapsulating densely aligned conical wires in a properly designed dielectric layer can maximize the amplitude of the generated piezoelectric output potential. According to these considerations we designed and fabricated macroscopic flexible strain sensors (active area: 1.5 cm(2)). The sensor was actuated in three point configuration inducing curvature radii of less than 10 cm and has a typical force sensitivity of 30 mV N-1.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available