Journal
NANOTECHNOLOGY
Volume 25, Issue 20, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/25/20/205601
Keywords
gallium phosphide; nanowire; wurtzite; defect; chemical beam epitaxy
Funding
- Marie Curie Initial Training Action (ITN) [Q-NET 264034]
- MIUR [2009HS2F7N_003]
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The crystal structure of GaP nanowires grown by Au-assisted chemical beam epitaxy was investigated as a function of group V flux and growth temperature. By increasing the tertiarybutyl phosphine flux we obtained nanowires with a stacking defect-free wurtzite crystal structure. Variation of growth temperature also had a profound impact on the crystal structure. Lowering the growth temperature from 600 to 560 degrees C and keeping constant both triethylgallium and tertiarybutyl phosphine precursor fluxes, the crystal structure of GaP NWs was drastically improved from a highly defective intergrowth of zinc-blende and wurtzite to a wurtzite crystal structure free of stacking defects. These results are compared to current literature on GaP NW growth, and we suggest that the low V/III ratio is the key ingredient for the high crystal quality of our GaP nanowires.
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