Journal
NANOTECHNOLOGY
Volume 25, Issue 50, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/25/50/505601
Keywords
nanowire; HBr; in situ etching; MOVPE
Funding
- Swedish Research Council (Vetenskapsradet)
- Swedish Foundation for Strategic Research (SSF)
- Knut and Alice Wallenberg Foundation
- Swedish Energy Agency
- EU program NWs4Light [280773]
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We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microscopy (TEM) characterization reveals a partial transition from a wurtzite crystal structure to a zincblende upon the use of HBr during growth. For InP, defect-related luminescence due to parasitic radial growth is removed by use of HBr. For GaP, the etching with HBr reduced the defect-related luminescence, but no change in peak emission energy was observed. For GaAs, the HBr etching resulted in a shift to lower photon emission energies due to a shift in the crystal structure, which reduced the wurtzite segments.
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