Journal
NANOTECHNOLOGY
Volume 25, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/25/5/055501
Keywords
photodetector; ZnO nanowires; graphene
Funding
- National Natural Science Foundation of China [61176049, 61307047]
- Program for New Century Excellent Talents in Fujian Province University (NCETFJ)
- China Scholarship Council (CSC)
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High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.
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