Journal
NANOTECHNOLOGY
Volume 24, Issue 41, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/41/415708
Keywords
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Funding
- French ANR project [ANR-11BS04-0019]
- China Scholarship Council (CSC) [2011618135]
- UPMC EMERGENCE project
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Two-dimensional semiconductors are increasingly relevant for emergent applications and devices, notably for hybrid heterostructures with graphene. We fabricate few-layer, large-area (a few tens of microns across) samples of the III-VI semiconductors GaS, GaSe and InSe using the anodic bonding method and characterize them by simultaneous use of optical microscopy, atomic force microscopy and Raman spectroscopy. Two-terminal devices with a gate are constructed to show the feasibility of applications based on these.
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