Journal
NANOTECHNOLOGY
Volume 24, Issue 37, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/37/375202
Keywords
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Funding
- General Research Fund of the Research Grants Council of Hong Kong SAR, China [CityU 101111]
- National Natural Science Foundation of China [51202205]
- Guangdong National Science Foundation [S2012010010725]
- Science Technology and Innovation Committee of Shenzhen Municipality [JCYJ20120618140624228]
- Shenzhen Research Institute, City University of Hong Kong
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In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm(2) V-1 s(-1) when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance.
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