Journal
NANOTECHNOLOGY
Volume 24, Issue 39, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/39/395603
Keywords
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Funding
- National Natural Science Foundation of China [11274204, 61205174, 61307120]
- Shandong Excellent Young Scientist Research Award Fund [BS2012CL034]
- Shandong Province Higher Educational Science and Technology Program [J12LA07]
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Direct deposition of graphene on a dielectric substrate is demonstrated using a chemical vapor deposition system with a two-temperature reactor. The two-temperature reactor is utilized to offer sufficient, well-proportioned floating Cu atoms and to provide a temperature gradient for facile synthesis of graphene on dielectric surfaces. The evaporated Cu atoms catalyze the reaction in the presented method. C atoms and Cu atoms respectively act as the nuclei for forming graphene film in the low-temperature zone and the zones close to the high-temperature zones. A uniform and high-quality graphene film is formed in an atmosphere of sufficient and well-proportioned floating Cu atoms. Raman spectroscopy, scanning electron microscopy and atomic force microscopy confirm the presence of uniform and high-quality graphene.
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