Journal
NANOTECHNOLOGY
Volume 24, Issue 40, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/40/405204
Keywords
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Funding
- National Science Foundation (NSF) [ECCS-1028569, CCF-1319935]
- NSF [ECCS 0954423]
- NSF Graduate Research Fellowship
- Office of Naval Research (ONR) [N00014-10-1-0853]
- Direct For Computer & Info Scie & Enginr
- Division of Computing and Communication Foundations [1319935] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0954423] Funding Source: National Science Foundation
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The high field properties of carbon nanotube (CNT) network thin film transistors (CN-TFTs) are important for their practical operation, and for understanding their reliability. Using a combination of experimental and computational techniques we show how the channel geometry (length L-C and width W-C) and network morphology (average CNT length L-t and alignment angle distribution theta) affect heat dissipation and high field breakdown in such devices. The results suggest that when W-C >= L-t, the breakdown voltage remains independent of W-C but varies linearly with L-C. The breakdown power varies almost linearly with both W-C and L-C when W-C >> L-t. We also find that the breakdown power is more susceptible to the variability in the network morphology compared to the breakdown voltage. The analysis offers new insight into the tunable heat dissipation and thermal reliability of CN-TFTs, which can be significantly improved through optimization of the network morphology and device geometry.
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