Journal
NANOTECHNOLOGY
Volume 24, Issue 39, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/39/395203
Keywords
-
Funding
- Department of Energy [DE-FG02-08ER46520]
- Defense Microelectronics Activity (DMEA) [H94003-10-2-1003]
- U.S. Department of Energy (DOE) [DE-FG02-08ER46520] Funding Source: U.S. Department of Energy (DOE)
Ask authors/readers for more resources
Vertically aligned undoped ZnO nanotips, nanotubes and nanorods were synthesized on the top facets of Na-doped ZnO nanorods without catalytic assistance under different growth times in a chemical vapor deposition system. The growth mechanism is discussed. The Na-doped nanorods were grown on a ZnO seed layer on Si. The p-type conductivity of the Na-doped nanorods was studied by temperature-dependent photoluminescence and nanorod back-gated field effect transistor measurements. The undoped nanorods, Na-doped nanorods and undoped seed layer form an n-p-n memory structure. The programming and retention characteristics have been demonstrated.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available