Journal
NANOTECHNOLOGY
Volume 24, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/4/045702
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Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Fonds de Recherche du Quebec-Nature et Technologies (FRQ-NT)
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We have performed room-temperature time-resolved photoluminescence measurements on samples that comprise InGaN insertions embedded in GaN nanowires. The decay curves reveal non-exponential recombination dynamics that evolve into a power law at long times. We find that the characteristic power-law exponent increases with emission photon energy. The data are analyzed in terms of a model that involves an interplay between a radiative state and a metastable charge-separated state. The agreement between our results and the model points towards an emission dominated by carriers localized on In-rich nanoclusters that form spontaneously inside the InGaN insertions.
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