Journal
NANOTECHNOLOGY
Volume 24, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/2/025202
Keywords
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Funding
- NSF-ECCS [ECCS-1247874]
- State of Texas through the Texas Center for Superconductivity
- National Science Foundation [CHE-0616805]
- RA Welch Foundation [E-1297]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1247874] Funding Source: National Science Foundation
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We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS2, which exhibit an on/off ratio exceeding 2 x 10(6) and a carrier mobility of similar to 1 cm(2) V-1 s(-1). The results demonstrate the great potential of SnS2, a layered semiconductor with finite band gap, as the building block for future nanoelectronic applications complementary to graphene-based materials with zero or small band gaps.
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