Journal
NANOTECHNOLOGY
Volume 23, Issue 21, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/21/215204
Keywords
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Funding
- European Community [214989]
- Cariplo Foundation
- ARC [FT100100589]
- ARC-DECRA [DE120100702]
- Australian Research Council [DE120100702, FT100100589] Funding Source: Australian Research Council
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We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 x 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.
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