Journal
NANOTECHNOLOGY
Volume 23, Issue 13, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/13/135703
Keywords
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Funding
- French National Research Agency (ANR) [ANR-08-NANO-031-01]
- METSA network
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We demonstrate the strong influence of strain on the morphology and In content of InGaN insertions in GaN nanowires, in agreement with theoretical predictions which establish that InGaN island nucleation on GaN nanowires may be energetically favorable, depending on In content and nanowire diameter. EDX analyses reveal In inhomogeneities between the successive dots but also along the growth direction within each dot, which is attributed to compositional pulling. Nanometer-resolved cathodoluminescence on single nanowires allowed us to probe the luminescence of single dots, revealing enhanced luminescence from the high In content top part with respect to the lower In content dot base.
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