Journal
NANOTECHNOLOGY
Volume 23, Issue 47, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/47/475709
Keywords
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Funding
- Flemish Government
- FWO-Vlaanderen
- MEXT (Ministry of Education, Culture, Sports, Science and Technology)
- Russian Federation's Ministry of Education and Science [P549]
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Arrays of vertically aligned Si-nanopillars, with average diameters of 100 nm and 5 mu m length, have been prepared by wet chemical etching of crystalline silicon in a special manner. Samples with smooth-and porous-walled nanopillars have been studied. In the case of the latter, Si-nanocrystals, passivated with SiOx, decorating the surface of the nanopillars are identified by the means of TEM and FTIR. When excited by UV-blue light, the porous-walled Si-nanopillars are found to have a strong broad visible emission band around 1.8 eV with a nearly perfect Gaussian shape, mu s luminescence lifetimes, minor emission polarization and a non-monotonic temperature dependence of luminescence. The Si-nanocrystal surface is found to be responsible for the luminescence. The red-shift of the emission maximum and the luminescence quenching induced by oxidation in UV-ozone confirm this assumption. A model of luminescence involving UV photon absorption by Si-nanocrystals with subsequent exciton radiative recombination on defect sites in SiOx covering Si-nanocrystals has been proposed. Possible applications of the nanopillar arrays are discussed.
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