Journal
NANOTECHNOLOGY
Volume 23, Issue 11, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/11/115603
Keywords
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Funding
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2009-0066463]
- Australian Research Council
- National Research Foundation of Korea [2009-0066463] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of < 111 > segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated.
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