Journal
NANOTECHNOLOGY
Volume 23, Issue 27, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/27/275602
Keywords
-
Funding
- CONICET
- CIUNT [26/E419, 26/E439]
- FONCyT (PICT) [400]
- NSERC
Ask authors/readers for more resources
Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO2 films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO C C) source-SiO2 substrate distance. We observe C flakes on the ZnO NWs/SiO2 substrates which exhibit short NWs that developed on both sides. The SiO2 and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO2 were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available