Journal
NANOTECHNOLOGY
Volume 24, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/1/015705
Keywords
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Funding
- Focus Center Research Program-Center on Functional Engineered Nano Architectonics (FENA)
- DARPA
- National Science Foundation of China [11174244]
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Quantum spin Hall (QSH) systems are insulating in the bulk with gapless edges or surfaces that are topologically protected and immune to nonmagnetic impurities or geometric perturbations. Although the QSH effect has been realized in the HgTe/CdTe system, it has not been accomplished in normal 3D topological insulators. In this work, we demonstrate a separation of two surface conductions (top/bottom) in epitaxially grown Bi2Te3 thin films through gate dependent Shubnikov-de Haas (SdH) oscillations. By sweeping the gate voltage, only the Fermi level of the top surface is tuned while that of the bottom surface remains unchanged due to strong electric field screening effects arising from the high dielectric constant of Bi2Te3. In addition, the bulk conduction can be modulated from n- to p-type with a varying gate bias. Our results on the surface control hence pave a way for the realization of QSH effect in topological insulators which requires a selective control of spin transports on the top/bottom surfaces.
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