4.6 Article

Synthesis and characterization of low temperature Sn nanoparticles for the fabrication of highly conductive ink

Journal

NANOTECHNOLOGY
Volume 22, Issue 22, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/22/225701

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Funding

  1. Ministry of Education, Science and Technology [R32-10051]
  2. National Research Foundation of Korea [R32-2011-000-10051-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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To fabricate a low cost, highly conductive ink for inkjet printing, we synthesized a gram scale of uniformly sized Sn nanoparticles by using a modified polyol process and observed a significant size-dependent melting temperature depression from 234.1 degrees C for bulk Sn to 177.3 degrees C for 11.3 nm Sn nanoparticles. A 20 wt% of Sn nanoparticles was dispersed in the 50% ethylene glycol: 50% isopropyl alcohol mixed solvent for the appropriate viscosity (11.6 cP) and surface tension (32 dyn cm(-1)). To improve the electrical property, we applied the surface treatments of hydrogen reduction and plasma ashing. The two treatments had the effect of diminishing the sheet resistance from 1 k Omega/sq to 50 Omega/sq. In addition, conductive patterns (1 cm x 1 cm) were successfully drawn on the Si wafer using an inkjet printing instrument with conductive Sn ink. The maximum resistivity for an hour of sintering at 250 degrees C was 64.27 mu Omega cm, which is six times higher than the bulk Sn resistivity (10.1 mu Omega cm).

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