Journal
NANOTECHNOLOGY
Volume 23, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/3/035201
Keywords
-
Funding
- National Research Program for the Nano Semiconductor Apparatus Development
- Korea Ministry of Knowledge and Economy [10034831]
- National Research Foundation of Korea [2011K000610]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10034831] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-50170] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Electronic bipolar resistive switching and its degradation in the Pt/TiO2/Pt structure were studied. The electronic bipolar switching was induced from the asymmetric trap distribution of the structure under its unipolar reset state. The imbalanced migration of oxygen accompanied by electronic switching significantly degrades switching endurance. Instead, the anti-serial connection of Pt/TiO2/Pt cells resulted in substantial improvements in endurance, underscoring the importance of vacancy migration in device reliability. In addition, the independent control of resistance states of the two connected cells provides the freedom to control resistance ratio, switching direction, and reliability.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
