Journal
NANOTECHNOLOGY
Volume 22, Issue 41, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/41/415204
Keywords
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Funding
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2010-0019197]
- World Class University (WCU) [R32-2008-000-10082-0]
- MKE/KEIT [10030559]
- Seoul R BD Program [PA090914]
- National Research Foundation of Korea [R32-2011-000-10082-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We construct a flexible pn heterostructured photodiode using a CdTe nanoparticle thin film and a single ZnO nanowire (NW) on a plastic substrate. The photocurrent characteristics of the flexible photodiode are examined under illumination with 325 nm wavelength light and the photocurrent efficiencies at bias voltages of +/- 2.5 V are estimated to be 8.0 and 2.1 mu A W(-1) under forward and reverse bias conditions, respectively. The photocurrent generation of the pn heterostructured photodiode is dominantly associated with the transport of the photogenerated charge carriers in the single ZnO NW. Furthermore, the operations of our flexible photodiode are investigated in the upwardly and downwardly bent states, as well as in the flat state. S Online supplementary data available from stacks. iop. org/Nano/22/415204/mmedia
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