4.6 Article

Metal-supported high crystalline Bi2Se3 quintuple layers

Journal

NANOTECHNOLOGY
Volume 22, Issue 46, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/46/465602

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Funding

  1. National Research Foundation of Korea
  2. Ministry of Education, Science and Technology of the Korean government [2005-2002369, 2007-0054038, 2010-0025301, 2010-0018781]
  3. National Research Foundation of Korea [2010-0018781, 2007-0054038, 2005-2002369, 2010-0025301] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Atomically flat thin films of Bi2Se3 were grown on Au(111) metal substrate using molecular beam epitaxy. Hexagonal atomic structures and quintuple layer steps were observed at the surfaces of grown films using scanning tunneling microscopy. Multiple sharp peaks from (003) family layers were characterized by x-ray diffraction measurements. The atomic stoichiometry of Bi and Se was considered using x-ray photoemission spectroscopy. Moire patterns were obtained at the surfaces of one quintuple layer films due to lattice mismatch between Bi2Se3 and Au. Our experiments suggest that Au is a reasonable material for electrodes in Bi2Se3 devices.

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