4.6 Article

Electrical failure behaviors of semiconductor oxide nanowires

Journal

NANOTECHNOLOGY
Volume 22, Issue 40, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/40/405703

Keywords

-

Funding

  1. National Science Foundation of China [11002124]
  2. Science Foundation of Chinese University [2009QNA4034]

Ask authors/readers for more resources

Electrical failure studies on semiconductor oxide nanowires (NWs) were performed in situ inside a transmission electron microscope (TEM). A high driven current leads to a sudden fracture of the SnO(2) NW and creates ultra-sharp and high aspect ratio tips at the broken ends, which provides a simple and reliable way for in situ nanoprobe fabrication. As a comparison, the TiO(2) NW fails due to Joule-heating-induced melting and retracts back into a nanosphere. The distinct behaviors are rooted in the different bonding nature. The strong ionic bonding between titanium and oxygen ions preserves the stoichiometry, while the covalently bonded SnO(2) NW decomposes before melting. The decomposition process is observed by resistively heating an SnO(2)/TiO(2) core-shell structure. It has been demonstrated that the needle-like geometry greatly enhanced field emission properties of SnO(2) NWs.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available