Journal
NANOTECHNOLOGY
Volume 21, Issue 47, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/47/475206
Keywords
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Funding
- NSF [0829824]
- SRC FCRP through IFC
- International SEMATECH
- AFRL [FA8750-10-1-0138]
- IBM
- Division of Computing and Communication Foundations
- Direct For Computer & Info Scie & Enginr [0829824] Funding Source: National Science Foundation
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The resistive switching properties of Cu-doped-HfO2-based resistive-random-access-memory (ReRAM) devices are investigated under proton-based irradiations with different high-range total doses of 1.5, 3 and 5 Giga-rad[Si]. The measurement results obtained immediately after irradiation demonstrate that the proton-based total dose will introduce significant variations in the operation voltages and resistance values. These effects are enhanced almost linearly when the dose increases from 1.5 to 5 Giga-rad[Si]. Furthermore, five days after irradiation, the electrical properties of the device rebound, resulting in reduced operation voltages and resistance values. This is consistent with the time-dependent super-recovery behavior observed previously in CMOS gate oxide. These results can be explained by the proton irradiation effect on the electron/hole trap density inside HfO2 and its impact on ReRAM device metallic filament formation-and-rupture, which is based on electrolyte theory.
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