Journal
NANOTECHNOLOGY
Volume 21, Issue 11, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/11/115205
Keywords
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Funding
- Center for Nanoscale Mechatronics and Manufacturing (CNMM)
- Ministry of Education, Science and Technology (MEST) in Korea [2009-0082018, 2009-0082527]
- WCU (World Class University) [R31-10035]
- Ministry of Education, Science & Technology (MoST), Republic of Korea [R31-2008-000-10035-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [14-2008-03-001-00, 과C6A2605, 과06B1510, 2009-0082527, 2010-50177] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.
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