Journal
NANOTECHNOLOGY
Volume 21, Issue 48, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/48/485201
Keywords
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Funding
- Korea government (MEST) [2010-0019180, 2010-0018932]
- WCU [R32-2008-000-10082-0, R01-2008-000-20185-0]
- NRF [2009-0083380, R0A-2008-000-20032-0]
- National Research Foundation of Korea [R0A-2008-000-20032-0, 2009-0083380, 2007-0056879, 2008-0060083, 2010-50174] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The degradation pattern of SnO2 nanowire field effect transistors (FETs) was investigated by using an individual SnO2 nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al2O3 layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R-s-mu diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.
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