Journal
NANOTECHNOLOGY
Volume 22, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/5/055707
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Funding
- German Research Foundation (DFG) through the Research Training Group [1240, GRK 1240]
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In this paper, we studied the behavior of silicon quantum dots (Si-QDs) after etching and surface oxidation by means of photoluminescence (PL) measurements, Fourier transform infrared spectroscopy (FTIR) and electron paramagnetic resonance spectroscopy (EPR). We observed that etching of red luminescing Si-QDs with HF acid drastically reduces the concentration of defects and significantly enhances their PL intensity together with a small shift in the emission spectrum. Additionally, we observed the emergence of blue luminescence from Si-QDs during the re-oxidation of freshly etched particles. Our results indicate that the red emission is related to the quantum confinement effect, while the blue emission from Si-QDs is related to defect states at the newly formed silicon oxide surface.
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