Journal
NANOTECHNOLOGY
Volume 21, Issue 42, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/42/425503
Keywords
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Funding
- Pioneer Research Center through National Research Foundation of Korea [2010-0002231]
- Ministry of Education, Science and Technology (MEST) [2009-0078876, 2008-314-D00153]
- National Research Foundation of Korea [2008-314-D00153, 314-2008-1-D00153, 2009-0083009, 2009-0078876] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This paper reports a spontaneous method of controlling the growth mode from vertically arrayed ultra-slim MgZnO nanowires to nanowalls through the in-plane random motion of the seed crystals formed by surface phase separation. Seed crystals with a relatively Zn-rich phase were formed by the simultaneous injection of Mg and Zn and became strongly networked when the Zn/Mg flux ratio was increased at high temperatures, leading to the formation of MgZnO nanowalls on various conducting substrates. The hydrogen sensing performance of the MgZnO nanowalls with a two-dimensional network structure was superior to that of the one-dimensional MgZnO nanowires. Based on the microstructural characterizations, the growth procedure for the structural transition from MgZnO nanowires to nanowalls on the Si substrates was proposed.
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