Journal
NANOTECHNOLOGY
Volume 21, Issue 50, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/50/505704
Keywords
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Funding
- Western Institution of Nanoelectronics (WIN)
- National Science Council [NSC 98-2221-E-007-104-MY3, NSC 99-2221-E-007-096]
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In this study, we report on the formation of a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure and its field effect characteristics by controlled reaction between a supercritical fluid-liquid-solid (SFLS) synthesized Ge nanowire and Ni metal contacts. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies reveal a wide temperature range to convert the Ge nanowire to single-crystalline Ni2Ge by a thermal diffusion process. The maximum current density of the fully germanide Ni2Ge nanowires exceeds 3.5 x 10(7) A cm(-2), and the resistivity is about 88 mu Omega cm. The in situ reaction examined by TEM shows atomically sharp interfaces for the Ni2Ge/Ge/Ni2Ge heterostructure. The interface epitaxial relationships are determined to be Ge[01 (1) over bar1] parallel to Ni2Ge[0 (1) over bar1] and Ge(1 (1) over bar(1) over bar) parallel to Ni2Ge(100). Back-gate field effect transistors (FETs) were also fabricated using this low resistivity Ni2Ge as source/drain contacts. Electrical measurements show a good p-type FET behavior with an on/off ratio over 10(3) and a one order of magnitude improvement in hole mobility from that of SFLS-synthesized Ge nanowire.
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