Journal
NANOTECHNOLOGY
Volume 20, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/12/125401
Keywords
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Funding
- Tera-level Nano Devices
- Korean Ministry of Science and Technology
- Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) [KRF-2007-313-C00254]
- National Core Research Center at GIST
- Korea Ministry of Science and Technology
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The characteristics of domain wall (DW) pinning at a notch in a spin-valve nanowire were investigated when a DW was created by a current, flowing into a spin-valve nanowire. It was found that DW pinning at a notch is quite sensitive to the magnitude of the current and its polarity. The current-polarity dependence of DW pinning is likely due to the spin structure in the core of the DW, which is determined by an Oersted field from the current in a Cu layer. This indicates that the control of DW pinning at a notch in a nanowire can be achieved by a current acting on its own, which is an important advantage of this method, compared with field-induced DW control.
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