Journal
NANOTECHNOLOGY
Volume 20, Issue 33, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/33/335706
Keywords
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Funding
- Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology [2009-0083214]
- National Research Foundation of Korea [과06A1507, 과C6A1903, 2008-2002598] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This paper reports the formation of a thin ZnO energy barrier between a CdSe quantum dot (Q dots) sensitizer and TiO2 nanotubes (TONTs) for improved current efficiency of Q dot-sensitized solar cells. The formation of a ZnO barrier between TONTs and the Q dot sensitizer increased the short-circuit current under illumination and also reduced the dark current in a dark environment. The power conversion efficiency of Q dot-sensitized TONT solar cells increased by 25.9% in the presence of the ZnO thin layer due to improved charge-collecting efficiency and reduced recombination.
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