Journal
NANOTECHNOLOGY
Volume 20, Issue 34, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/0957-4484/20/34/345201
Keywords
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Funding
- Ministry of Education, Science and Technology (MEST) of Korea [R31-20008-00010026-0]
- National Research Foundation of Korea [2008-0060067] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdOx and Cu-doped MoOx stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater than 10. To demonstrate a neural network circuit, we operated the cell array device as an electrically modifiable synapse array circuit and carried out a weighted sum operation. This demonstration of cross-point arrays, based on resistive switching memory, opens the way for feasible ultra-high density synapse circuits for future large-scale neural network systems.
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