Journal
NANOTECHNOLOGY
Volume 21, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/5/055302
Keywords
-
Funding
- National Science Council of ROC (NSC) [98-2120-M-008001]
Ask authors/readers for more resources
This study demonstrates the precise placement of Ge quantum dots (QDs) in an SiO(2) or Si(3)N(4) matrix in a self-organized manner by thermally oxidizing SiGe in nanostructures. The effectiveness of this method is shown by a variety of geometries including nanotrenches, nanorods and polygonal nanocavities. Modulating the structural geometry and peripheral spacer materials effectively places a single Ge QD in the center of an oxidized SiGe nanostructure or individual QDs at the corners (edges). This study also reports the fabrication of Ge QD single-electron devices that exhibit clear Coulomb staircases and differential conductance oscillations at room temperature.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available