Journal
NANOTECHNOLOGY
Volume 20, Issue 15, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/15/155203
Keywords
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Funding
- World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan
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The electrical properties of individual ZnO nanowires were investigated for two methods of fabricating nanowire-electrode junctions. The number of carriers in the nanowires was increased by electrostatically doping them by applying a gate voltage. The nanowires were chemically doped by introducing impurities during growth. The Ga-doped nanowires had a linear current-voltage relationship over a wide voltage region. The nanowire-electrode junctions were formed either by using lithography to form electrodes on the nanowire or by using an AFM probe to move a nanowire onto prepared electrodes. With both methods, electrodes made of Ga-doped ZnO were found to make better electrical contact with the nanowire than those made of Ti/Au.
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