Journal
NANOTECHNOLOGY
Volume 20, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/9/095301
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This paper reports a method for fabricating a 100 nm scale heater-thermometer into a silicon microcantilever based on contact photolithography and a controlled annealing process. The heater is formed during a photolithography process that can achieve a minimum feature size of about 1 mu m, while careful control of doping and annealing parameters allows the heater size to be further decreased, to a width of 100 nm. The heater is fabricated onto the free end of a silicon cantilever suitable for scanning probe microscopy, and can be integrated into cantilevers with or without sharp tips. The fabricated heater has a maximum temperature of over 700 degrees C, and a heating time of 56 mu s to reach 500 degrees C.
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