Journal
NANOTECHNOLOGY
Volume 19, Issue 26, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/19/26/265202
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Funding
- Korea Institute of Industrial Technology(KITECH) [10022916, 10030101] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [과C6A1602, 2005-01237] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose I-on/I-off ratios were as high as similar to 10(8) were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.
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