Journal
NANOTECHNOLOGY
Volume 19, Issue 44, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/19/44/445707
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Funding
- National Science Council
- Ministry of Education of the Republic of China
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A new and general approach enabling us to amplify not only the bandgap emission of ZnO nanorods but also the defect emission of Al(2)O(3) is proposed. The light intensity of the band edge emission of ZnO nanorods can be improved by as much as 19 times after the decoration of Al2O3 layers. Moreover, white light emission arising from Al2O3 defects in ZnO/Al(2)O(3) nanostructures also shows a large enhancement factor of 12 times. Our new strategy offers an alternative possibility to create strong white and blue light-emitting devices.
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