Related references
Note: Only part of the references are listed.Enhancing etch resistance of hydrogen slisesquioxane via postdevelop electron curing
Joel K. W. Yang et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2006)
Characterization of hydrogen silsesquioxane as a Cl2/BCl3 inductively coupled plasma etch mask for air-clad InP-based quantum well waveguide fabrication
D. Park et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2006)
Realization of sub-micron patterns on GaAs using a HSQ etching mask
D Lauvernier et al.
MICROELECTRONIC ENGINEERING (2005)
Sub-10 nm electron beam nanolithography using spin-coatable TiO2 resists
MSM Saifullah et al.
NANO LETTERS (2003)
Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication
SL Rommel et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2002)
Electron cyclotron resonance-reactive ion beam etching of InP by cyclic injection of CH4/H-2/Ar and O-2
T Suzuki et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2002)
Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists
MSM Saifullah et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)