Journal
NANOTECHNOLOGY
Volume 19, Issue 15, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/19/15/155303
Keywords
-
Ask authors/readers for more resources
A typical method for sub-micrometer compound semiconductor dry etching utilizes polymethylmethacrylate ( PMMA) to transfer patterns to SiO2 as intermediate masks, which limits its ability to obtain etching resolutions approaching sub-10 nm. We report a new approach for direct sub-10 nm pattern transfer using sol-gel derived spin-coatable ZrO2 resist as the mask. The optimal dose of ZrO2 resist is similar to 160 mC cm(-2). The sample InP compound semiconductor etching selectivity to ZrO2 is over 13:1, with high aspect ratio of 35:1. The smallest etching feature is 9 nm. These results will be very useful for realizing various challenging nanoscale photonic and electronic devices and circuits.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available