Single-crystal nanowires grown via electron-beam-induced deposition

Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of three-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)(6)) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this work, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF(6)) precursor. High resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured beta-tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W(3)O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.