Thermochemical hole burning performance of TCNQ-based charge transfer complexes with different electrical conductivities

Thermochemical hole burning (THB) memory is an ultrahigh density data storage technique based on the scanning tunneling microscope (STM). It utilizes the STM current to induce localized thermochemical decomposition of TCNQ-based charge transfer (CT) complexes and sequentially create nanometer-sized holes as information bits. The writing reliability and hole size depend on many factors, including the properties of the storage materials and the STM tip, and the tip-sample distance and interaction. We have found here that for the high electrical conductivity CT complexes, the hole size (represented by volume) monotonically decreases with the tip displacement increasing in the direction of leaving the sample; but for low electrical conductivity samples, the hole size first increases and then decreases with the tip displacement increasing in the same direction. Subsequent experiments and analyses indicate that the surface deformation induced by the tip-sample interaction and the heat conduction of the metal tip account for such a unique phenomenon.