Synthesis and characterization of TiOx nanowires using a novel silicon oxide support layer

Titanium oxide (TiOx) nanowires of various compositions were synthesized using a vapour-liquid-solid growth process without the need of a titanium-based support layer. The process utilized liquid gold droplets, evaporated titanium vapours, and an argon -5% oxygen gas mixture at 1100 degrees C. A thin layer of thermally grown silicon oxide was used as the support layer. The resulting nanowires were 80-100 nm in diameter with lengths varying from 0.5 to 10 mu m. Nanowires of TiO, as opposed to TiO2, were formed in low pressures of argon-oxygen. Environmental pressure was found to greatly affect nanowire quality. Surface abrasion did not contribute to or inhibit the overall growth process. X-ray photon spectroscopy and Auger electron spectroscopy confirmed the presence of titanium. X-ray diffraction and transmission electron microscopy electron diffraction analysis confirmed the presence of rutile and face centred cubic crystal structures in both materials.