Journal
NANOSCALE RESEARCH LETTERS
Volume 5, Issue 11, Pages 1768-1773Publisher
SPRINGEROPEN
DOI: 10.1007/s11671-010-9708-9
Keywords
Graphene; Chemical vapor deposition; Transfer; Raman spectroscopy; Transparent; Flexible; Conductive film
Funding
- Ministry of Education, Science and Technology [2009-0089315, 2009-0083380]
- Korea Evaluation Institute of Industrial Technology (KEIT) [KI002042] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0089315, 2010-50174] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrate the synthesis of monolayer graphene using thermal chemical vapor deposition and successive transfer onto arbitrary substrates toward transparent flexible conductive film application. We used electron-beam-deposited Ni thin film as a synthetic catalyst and introduced a gas mixture consisting of methane and hydrogen. To optimize the synthesis condition, we investigated the effects of synthetic temperature and cooling rate in the ranges of 850-1,000A degrees C and 2-8A degrees C/min, respectively. It was found that a cooling rate of 4A degrees C/min after 1,000A degrees C synthesis is the most effective condition for monolayer graphene production. We also successfully transferred as-synthesized graphene films to arbitrary substrates such as silicon-dioxide-coated wafers, glass, and polyethylene terephthalate sheets to develop transparent, flexible, and conductive film application.
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