Journal
NANOSCALE RESEARCH LETTERS
Volume 6, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1007/s11671-010-9796-6
Keywords
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Funding
- 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
- Special Funds for Major State Basic Research Project (973 program) of China [2006CB604907]
- National Science Foundation of China [60506002, 60776015]
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Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 +/- 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 +/- 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.
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