Journal
NANOSCALE AND MICROSCALE THERMOPHYSICAL ENGINEERING
Volume 18, Issue 2, Pages 183-193Publisher
TAYLOR & FRANCIS INC
DOI: 10.1080/15567265.2014.892553
Keywords
thin films; phonon boundary scattering; in-plane thermal conductivity; micro-Raman
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Funding
- DARPA MESO program [N66001-11-1-4107]
- Fundamental Research Funds for the Central Universities of China [FRF-AS-12-002, FRF-TP-11-001B]
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We report a micro-Raman-based optical method to measure in-plane thermal conductivity of ultrathin films. With the use of 20-nm-thick SiO2 substrates that assure in-plane heat transfer, sub-100-nm Bi films and Al2O3 films as thin as 5 nm were successfully measured. The results of Bi films reveal that phonon boundary scattering, both at the surface/interface and at the grain boundaries, reduces in-plane lattice thermal conductivity. The measurements of amorphous Al2O3 films were accomplished using thin Bi film as a Raman temperature sensor, and the results agree with the minimum thermal conductivity models for dielectrics. Our work demonstrates that the micro-Raman method is promising for characterization of in-plane thermal conductivity and phonon behaviors of thin-film structures if the Raman temperature sensor material and substrate material are carefully selected.
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