Journal
NANOSCALE
Volume 10, Issue 31, Pages 15071-15077Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8nr04416c
Keywords
-
Categories
Funding
- Spanish Ministry of Economy and Competitiveness, through the Severo Ochoa Programme for Centres of Excellence in RD [SEV-2015-0522]
- Fundacio Cellex Barcelona
- CERCA Programme/Generalitat de Catalunya
- European Union H2020 Programme [696656]
- U.S. Defense Thread Reduction Agency [HDTRA1-16-1-0032]
- U.S. National Science Foundation [ECCS-1508898]
- McMinn Endowment at Vanderbilt
- Guangdong University of Technology (GDUT)
- National Natural Science Foundation of China [11674310]
Ask authors/readers for more resources
Mobility engineering is one of the most important challenges that determine the optoelectronic performance of two-dimensional (2D) materials. So far, charged-impurity scattering and electrical-contact barriers have been suppressed through high-kappa dielectrics and seamless contact engineering, giving rise to carrier-mobility improvement in exfoliated 2D semiconducting MoS2. Here we demonstrate a facile and scalable technique to effectively suppress both Coulomb scattering and electron-phonon scattering via the HfO2 overlayer, resulting in a large mobility improvement in CVD-grown monolayer MoS2, in excess of 60 cm(2) V-1 s(-1). Surface passivation and suppression of Coulomb scattering can partially contribute to the mobility increase. Interestingly, we correlate the mobility increase with phonon quenching through Raman and temperature-dependent mobility measurements. The experimental method is facile, industrially scalable, and renders phonon engineering an additional leverage towards further improvements in 2D semiconductor mobility and device performance.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available