4.8 Article

Robust ferroelectricity in two-dimensional SbN and BiP

Journal

NANOSCALE
Volume 10, Issue 17, Pages 7984-7990

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7nr09006d

Keywords

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Funding

  1. National Natural Science Foundation of China [11574029, 11734003, 21503014]
  2. MOST Project of China [2014CB920903, 2016YFA0300600]
  3. National Key Research and Development Program of China [2017YFB0701600]

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Based on first-principles calculations, we discover two new two-dimensional (2D) ferroelectric materials SbN and BiP. Both of them are stable in a phosphorene-like structure and maintain their ferroelectricity above room temperature. Till date, SbN has the largest in-plane spontaneous polarization of about 7.81 x 10(-10) C m(-1) ever found in 2D ferroelectric materials, and it can retain its ferroelectricity until melting at about 1700 K. The spontaneous polarizations and switching barriers can easily be tuned by strains. Additionally, the ferroelectricity can still be maintained in their multilayers. These advantages make SbN and BiP promising candidate materials for future integrated ferroelectric devices.

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